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1N4448W Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # 1N4448W
Description  Surface Mount Small Signal Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N4448W Datasheet(HTML) 1 Page - Diotec Semiconductor

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1N4148W, 1N4448W
1N4148W, 1N4448W
Surface Mount Small Signal Diodes
Kleinsignal-Dioden für die Oberflächenmontage
Version 2009-01-28
Dimensions - Maße [mm]
Power dissipation – Verlustleistung
400 mW
Repetitive peak reverse voltage
eriodische Spitzensperrspannung
75 V
Plastic case – Kunststoffgehäuse
SOD-123
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
1N4148W, 1N4448W
Power dissipation − Verlustleistung
Ptot
400 mW 1)
Max. average forward current – Dauergrenzstrom (dc)
IFAV
150 mA 1)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
300 mA 1)
Non repetitive peak forward surge current
toßstrom-Grenzwert
tp ≤ 1 s
p ≤ 1 µs
IFSM
IFSM
500 mA 1)
A
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
VRRM
75 V
Non repetitive peak reverse voltage – Stoßspitzensperrspannung
VRSM
100 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Forward voltage
urchlass-Spannung
1N4148W
IF = 10 mA
VF
< 1.0 V
1N4448W
IF = 5 mA
F = 100 mA
VF
F
0.62...0.72 V
1 V
Leakage current – Sperrstrom 2)
VR = 20 V
R = 75 V
IR
IR
< 25 nA
5 µA
Leakage current – Sperrstrom, Tj = 125°C 2)
VR = 20 V
R = 75 V
IR
IR
< 30 µA
50 µA
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
CT
4 pF
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
Trr
< 4 ns
Thermal resistance junction to ambient air
ärmewiderstand Sperrschicht – umgebende Luft
RthA
< 400 K/W 1)
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
0.6
3.8
2.7
0.1
Type
Code


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