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1N4448W Datasheet(PDF) 1 Page - Diotec Semiconductor |
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1N4448W Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1N4148W, 1N4448W 1N4148W, 1N4448W Surface Mount Small Signal Diodes Kleinsignal-Dioden für die Oberflächenmontage Version 2009-01-28 Dimensions - Maße [mm] Power dissipation – Verlustleistung 400 mW Repetitive peak reverse voltage eriodische Spitzensperrspannung 75 V Plastic case – Kunststoffgehäuse SOD-123 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 1N4148W, 1N4448W Power dissipation − Verlustleistung Ptot 400 mW 1) Max. average forward current – Dauergrenzstrom (dc) IFAV 150 mA 1) Repetitive peak forward current – Periodischer Spitzenstrom IFRM 300 mA 1) Non repetitive peak forward surge current toßstrom-Grenzwert tp ≤ 1 s p ≤ 1 µs IFSM IFSM 500 mA 1) A Repetitive peak reverse voltage – Periodische Spitzensperrspannung VRRM 75 V Non repetitive peak reverse voltage – Stoßspitzensperrspannung VRSM 100 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Forward voltage urchlass-Spannung 1N4148W IF = 10 mA VF < 1.0 V 1N4448W IF = 5 mA F = 100 mA VF F 0.62...0.72 V 1 V Leakage current – Sperrstrom 2) VR = 20 V R = 75 V IR IR < 25 nA 5 µA Leakage current – Sperrstrom, Tj = 125°C 2) VR = 20 V R = 75 V IR IR < 30 µA 50 µA Max. junction capacitance – Max. Sperrschichtkapazität VR = 0 V, f = 1 MHz CT 4 pF Reverse recovery time – Sperrverzug IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA Trr < 4 ns Thermal resistance junction to ambient air ärmewiderstand Sperrschicht – umgebende Luft RthA < 400 K/W 1) 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 0.6 3.8 2.7 0.1 Type Code |
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