HMC358MS8GE datasheet(1/6 Pages) HITTITE | MMIC VCO w/ BUFFER AMPLIFIER, 5.8

Part No.	HMC358MS8GE

Description	MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz

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HMC358MS8G / 358MS8GE

MMIC VCO w/ BUFFER

AMPLIFIER, 5.8 - 6.8 GHz

v04.0607

General Description

Features

Functional Diagram

The HMC358MS8G & HMC358MS8GE are GaAs

InGaP Heterojunction Bipolar Transistor (HBT) MMIC

VCOs. The HMC358MS8G & HMC358MS8GE inte-

grate resonators, negative resistance devices, varac-

tor diodes, and buffer amplifiers. The VCO’s phase

noise performance is excellent over temperature,

shock, and process due to the oscillator’s monolithic

structure. Power output is 11 dBm typical from a 3V

supply voltage. The voltage controlled oscillator is

packaged in a low cost, surface mount 8 lead MSOP

package with an exposed base for improved RF and

thermal performance.

Pout: +11 dBm

Phase Noise: -110 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: 3V @ 100 mA

15mm2 MSOP8G SMT Package

Typical Applications

Low noise MMIC VCO w/Buffer Amplifier

for C-Band applications such as:

• UNII & Pt. to Pt. Radios

• 802.11a & HiperLAN WLAN

• VSAT Radios

Electrical Specifications, T

A = +25° C, Vcc = +3V

Parameter

Min.

Typ.

Max.

Units

Frequency Range

5.8 - 6.8

GHz

Power Output

811

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

-110

dBc/Hz

Tune Voltage (Vtune)

0

10

V

Supply Current (Icc)

100

mA

Tune Port Leakage Current (Vtune= 10V)

10

μA

Output Return Loss

9dB

Harmonics

2nd

3rd

-10

-20

dB

Pulling (into a 2.0:1 VSWR)

10

MHz pp

Pushing @ Vtune= +3V

150

MHz/V

Frequency Drift Rate

0.8

MHz/°C

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