SiHB22N60E

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Vishay Siliconix

S11-2087 Rev. B, 31-Oct-11

4

Document Number: 91472

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10 - Temperature vs. Drain-to-Source Voltage

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

1

0.001

0

0.4

1.0

1000

0.01

0.1

10

100

0.2

0.6

0.8

1.2

1.4

0.0001

T

T

V

V

0.1

1

10

100

1000

1

10

100

1000

* V

I

BVDSS Limited

Operation in this Area

Limited by R

DS(on)

100 μs

1 ms

10 ms

Single Pulse

Limited by R

5

10

15

20

25

25

50

75

100

125

150

0

675

600

- 60

0

160

725

700

650

625

575

- 40 - 20

20

40

60

80 100 120 140

550

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

Pulse Time (s)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse