Electronic Components Datasheet Search |
|
112MT160KS90PBF Datasheet(PDF) 2 Page - Vishay Siliconix |
|
112MT160KS90PBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94353 2 Revision: 13-Aug-08 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V IRRM/IDRM, MAXIMUM AT TJ = 125 °C mA 5.MT...K 80 800 900 800 10 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 9.MT...K 11.MT...K 80 800 900 800 20 100 1000 1100 1000 120 1200 1300 1200 140 1400 1500 1400 160 1600 1700 1600 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 5.MT...K 9.MT...K 11.MT...K UNITS Maximum DC output current at case temperature IO 120° rect. conduction angle 55 90 110 A 85 85 85 °C Maximum peak, one-cycle forward, non-repetitive on state surge current ITSM t = 10 ms No voltage reapplied Initial TJ = TJ maximum 390 950 1130 A t = 8.3 ms 410 1000 1180 t = 10 ms 100 % VRRM reapplied 330 800 950 t = 8.3 ms 345 840 1000 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 770 4525 6380 A2s t = 8.3 ms 700 4130 5830 t = 10 ms 100 % VRRM reapplied 540 3200 4510 t = 8.3 ms 500 2920 4120 Maximum I2 √t for fusing I2 √t t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 A2 √s Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 1.17 1.09 1.04 V High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ maximum 1.45 1.27 1.27 Low level value on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum 12.40 4.10 3.93 m Ω High level value on-state slope resistance rt2 (I > π x IT(AV)), TJ maximum 11.04 3.59 3.37 Maximum on-state voltage drop VTM Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction 2.68 1.65 1.57 V Maximum non-repetitve rate of rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 mA Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 |
Similar Part No. - 112MT160KS90PBF |
|
Similar Description - 112MT160KS90PBF |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |