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2SC3322 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3322 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3322 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,L=100mH;RBE=∞ 800 V V(BR)EBO Base-emitter breakdown voltage IE=10mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE sat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 100 μA ICEO Collector cut-off current VCE=650V; RBE=∞ 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 7 Switching times ton Turn-on time 1.0 μs tstg Storage time 3.0 μs tf Fall time IC=3A ; VCC≈250V IB1=0.6A; IB2=-1.5A 1.0 μs |
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