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2SC3885 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SC3885
Description  isc Silicon NPN Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3885 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3885
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
B
600
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 1400V; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
3
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
210
pF
Switching Times , Resistive load
tstg
Storage Time
2.5
μs
tf
Fall Time
ICP= 5A, IB1= 1A; IB2= -2A;
RL= 40Ω
0.15
μs
isc Website：www.iscsemi.cn
2


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