Document Number: 81001

www.vishay.com

Rev. 1.8, 16-May-11

3

This document is subject to change without notice.

CQY36N

Infrared Emitting Diode, RoHS

Compliant, 950 nm, GaAs

Vishay Semiconductors

Fig. 5 - Radiant Intensity vs. Forward Current

Fig. 6 - Radiant Power vs. Forward Current

Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature

Fig. 8 - Relative Radiant Power vs. Wavelength

Fig. 9 - Relative Radiant Intensity vs. Angular Displacement

94 7917

0.1

1

10

100

0.1

1

10

100

110

100

1000

13718

- 10

10

50

0

100

0

0.4

0.8

1.2

1.6

140

94 7993

900

950

0

0.25

0.5

0.75

1.0

1.25

λ - Wavelength (nm)

1000

94 7994

I

0.4

0.2

0

0.2

0.4

0.6

94 7919

0.6

0.9

0.8

0°

30°

10

°

20

°

40°

50°

60°

70°

80°

0.7

1.0