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2SD103 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD103 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 20 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 200 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 30 300 hFE-2 DC Current Gain IC= 2.5A; VCE= 5V 15 fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 10V 1 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 200 pF isc Website:www.iscsemi.cn |
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