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2SD1110 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1110 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V VBE(sat) Base -Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 50mA; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A; VCE= 5V 40 200 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 190 pF fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V 15 MHz hFE-2 Classifications S R Q 40-80 60-120 100-200 isc Website:www.iscsemi.cn 2 |
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