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2SD1117 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1117 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1117 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V VB E(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 2A; VCE= 5V 60 240 isc Website:www.iscsemi.cn 2 |
Similar Part No. - 2SD1117 |
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Similar Description - 2SD1117 |
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