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2SD1409 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1409 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.04A 2.5 V VECF Emitter-collector diode forward voltage IE=4A; IB=0 3.0 V ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA hFE-1 DC current gain IC=2A ; VCE=2V 600 hFE-2 DC current gain IC=4A ; VCE=2V 100 COB Collector output capacitance f=1MHz ; VCB=50V;IE=0 35 pF Switching times ton Turn-on time 1 μs tstg Storage time 8 μs tf Fall time IB1=-IB2=0.04A VCC=100V ,RL=25Ω 5 μs |
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