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2SD1416 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1416 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1416 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 3A; VCE= 3V 2000 15000 hFE -2 DC Current Gain IC= 7A; VCE= 3V 1000 Switching times ton Turn-on Time 0.8 μs tstg Storage Time 3.0 μs tf Fall Time IB1= -IB2= 6mA RL= 15Ω; VCC= 45V PW=20μs; Duty Cycle≤1% 2.5 μs isc Website：www.iscsemi.cn 2 |
Similar Part No. - 2SD1416 |
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Similar Description - 2SD1416 |
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