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2SD1495 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1495 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1495 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 600 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V 6 isc Website:www.iscsemi.cn 2 |
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