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2SD1705 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1705 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1705 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A B 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V VBE(sat)-1 Base -Emitter Saturation Voltage IC= 6A; IB= 0.3A B 1.5 V VBE(sat)-2 Base -Emitter Saturation Voltage IC= 10A; IB= 1A 2.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 2V 45 hFE-2 DC Current Gain IC= 3A; VCE= 2V 90 260 hFE-3 DC Current Gain IC= 6A; VCE= 2V 30 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 20 MHz Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 2.0 μs tf Fall Time IC= 6A, IB1= -IB2= 0.6A; VCC= 50V 0.2 μs hFE-2Classifications Q P 90-180 130-260 isc Website:www.iscsemi.cn 2 |
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