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2SD1727 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1727 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1727 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.4A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.4A B 1.5 V hFE DC Current Gain IC= 0.5A; VCE= 5V 5 25 VCB= 750V; IE= 0 10 μA ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1.0 mA VECF C-E Diode Forward Voltage IF= 1.5A 1.5 V fT Transition Frequency IC= 0.5A; VCE= 10V 2 MHz Switching Times, Resistive Load ts Storage Time 1.0 μs tf Fall Time IC= 1A; IB1= 0.3A; IB2= -0.6A, VCC= 200V 0.2 μs isc Website：www.iscsemi.cn |
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