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BD751A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD751A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD751 90 VCEO(SUS) Collector-Emitter Sustaining Voltage BD751A IC=100mA ; IB=0 120 V BD751 IC= 7.5A; IB= 0.75A 1.5 VCE(sat) Collector-Emitter Saturation Voltage BD751A IC= 5A; IB= 0.5A B 1.0 V BD751 IC= 7.5A; IB= 0.75A 1.8 VBE(sat) Base-Emitter Saturation Voltage BD751A IC= 5A; IB= 0.5A B 1.8 V BD751 VCEV= 100V;VBE(off)= 1.5V 0.5 ICEV Collector Cutoff Current BD751A VCEV= 130V;VBE(off)= 1.5V 0.5 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA BD751 IC= 7.5A ; VCE= 2V 15 60 hFE DC Current Gain BD751A IC= 5A ; VCE= 2V 25 100 fT Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V; ftest= 1MHz 4 MHz isc Website：www.iscsemi.cn 2 |
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