Electronic Components Datasheet Search |
|
BD899 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
BD899 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BD895/897/899/901 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD895 45 BD897 60 BD899 80 V(BR)CEO Collector-emitter breakdown voltage BD901 IC=100mA, IB=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ,IB=12mA 2.5 V VBE Base-emitter on voltage IC=3A ; VCE=3V 2.5 V BD895 VCB=45V, IE=0 TC=100℃ 0.2 2.0 BD897 VCB=60V, IE=0 TC=100℃ 0.2 2.0 BD899 VCB=80V, IE=0 TC=100℃ 0.2 2.0 ICBO Collector cut-off current BD901 VCB=100V, IE=0 TC=100℃ 0.2 2.0 mA BD895 VCE=30V, IB=0 BD897 VCE=30V, IB=0 BD899 VCE=40V, IB=0 ICEO Collector cut-off current BD901 VCE=50V, IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 2 mA hFE DC current gain IC=3A ; VCE=3V 750 VEC Diode forward voltage IE=8A 3.5 V ton Turn-on time 1 μs toff Turn-off time IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10Ω;tp=20μs 5 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.79 ℃/W |
Similar Part No. - BD899 |
|
Similar Description - BD899 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |