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BD899 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BD899
Description  Silicon NPN Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD899 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BD895/897/899/901
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD895
45
BD897
60
BD899
80
V(BR)CEO
Collector-emitter
breakdown voltage
BD901
IC=100mA, IB=0
100
V
VCEsat
Collector-emitter saturation voltage
IC=3A ,IB=12mA
2.5
V
VBE
Base-emitter on voltage
IC=3A ; VCE=3V
2.5
V
BD895
VCB=45V, IE=0
TC=100℃
0.2
2.0
BD897
VCB=60V, IE=0
TC=100℃
0.2
2.0
BD899
VCB=80V, IE=0
TC=100℃
0.2
2.0
ICBO
Collector cut-off current
BD901
VCB=100V, IE=0
TC=100℃
0.2
2.0
mA
BD895
VCE=30V, IB=0
BD897
VCE=30V, IB=0
BD899
VCE=40V, IB=0
ICEO
Collector cut-off current
BD901
VCE=50V, IB=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2
mA
hFE
DC current gain
IC=3A ; VCE=3V
750
VEC
Diode forward voltage
IE=8A
3.5
V
ton
Turn-on time
1
μs
toff
Turn-off time
IC=3A ; IB1=-IB2=12mA
VBE=-3.5V;RL=10Ω;tp=20μs
5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.79
℃/W


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