Document Number: 94547

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Revision: 11-May-10

5

FA38SA50LCP

Power MOSFET, 38 A

Vishay Semiconductors

Fig. 13 - Maximum Effective Transient Thermal Impedance, Junction to Case

Fig. 14 - Unclamped Inductive Test Circuit

Fig. 15 - Unclamped Inductive Waveforms

Fig. 16 - Maximum Avalanche Energy vs. Drain Current

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJC

C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Ω

D.U.T

L

+

-

Driver

A

15 V

20 V

R

G

V

DS

I

AS

t

p

V

DD

tp

25

50

75

100

125

150

0

200

400

600

800

1000

1200

Starting T , Junction Temperature ( C)

J

°

ID

TOP

BOTTOM

17A

24A

38A