GB100DA60UP

Insulated Gate Bipolar Transistor

(Warp 2 Speed IGBT), 100 A

Vishay Semiconductors

Document Number: 93001

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 22-Jul-10

7

Fig. 18b - Switching Loss Waveforms Test Circuit

ORDERING INFORMATION TABLE

t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

E

1

2

3

1

-

Insulated Gate Bipolar Transistor (IGBT)

2

-

B = IGBT Generation 5

3

-

Current rating (100 = 100 A)

4

-

Circuit configuration (D = Single switch with antiparallel diode)

5

-

Package indicator (A = SOT-227)

6

-

Voltage rating (60 = 600 V)

8

-

Totally lead (Pb)-free

7

-

Speed/type (U = Ultrafast IGBT)

Device code

5

13

24

67

8

G

B

100

D

A

60

U

P