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BU406H Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU406H Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU406H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE=250V; VBE= 0 VCE=250V; VBE= 0;TC= 150℃ 5.0 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 10 MHz tf Fall Time IC= 5A; IB1= -IB2= 0.8A 0.4 μs isc Website:www.iscsemi.cn 2 |
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