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BU2525DF Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2525DF Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2525DF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6 A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6 A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 72 110 218 mA hFE-1 DC current gain IC=1.0A ; VCE=5V 11 hFE-2 DC current gain IC=8A ; VCE=5V 5 7 9.5 VF Diode forward voltage IF=8A 1.6 2.0 V CC Collector capacitance IE=0, f=1MHz;VCB=10V 145 pF |
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