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BU2727DF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part No. BU2727DF
Description  Silicon NPN Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU2727DF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2727DF
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1700
V
VCEO
Collector-emitter voltage
Open base
825
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
12
A
ICM
Collector current -peak
30
A
IB
Base current (DC)
12
A
IBM
Base current -peak
25
A
Ptot
Total power dissipation
TC=25℃
45
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150


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