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BU4506AF Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU4506AF Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4506AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 0.98 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 10 hFE-2 DC Current Gain IC= 3A; VCE= 5V 4.2 7.3 Switching times (16kHz line deflection circuit) tstg Storage Time 4.6 μs tf Fall Time IC= 3A, IB1= 0.6A; IB2= -1.5A 0.45 μs isc Website:www.iscsemi.cn 2 |
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