BUH1015 datasheet(2/3 Pages) ISC

Part #	BUH1015

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

BUH1015

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Emitter-base breakdown voltage

IE=10mA; IC=0

10

V

VCEO(SUS)

Collector-emitter sustaining voltage

IC=100mA; IB=0

700

V

VCEsat

Collector-emitter saturation voltage

IC=10A; IB=2A

1.5

V

VBEsat

Base-emitter saturation voltage

IC=10A; IB=2A

1.5

V

ICES

Collector cut-off current

VCE=1500V ;VBE=0

Tj=125°C

0.2

2

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.1

mA

hFE

DC current gain

IC=10A ; VCE=5V

7

10

14

Switching times

ts

Storage time

1.5

μs

tf

Fall time

IC=10A;IB1=2A;IB2=-6A;

VCC=400V

110

ns

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-case

Thermal resistance junction case

0.78

℃/W

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