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BUL45 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUL45 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL45 DESCRIPTION ・With TO-220C package ・Fast switching speed ・High voltage APPLICATIONS ・Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current (peak) 10 A IB Base current 2 A Ptot Total power dissipation TC=25℃ 75 W Tj Max.operating junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1.65 ℃/W |
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