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BUT93 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUT93 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT93 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0, L= 125mH 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 750mA B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.1 V ICES Collector Cutoff Current VCE= 600V; VBE= 0 VCE= 600V; VBE= 0; TC=125℃ 0.2 1.5 mA hFE DC Current Gain IC= 1A; VCE= 2V 10 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 9 MHz Switching Times ;Resistive Load ts Storage Time 2.0 μs tf Fall Time IC= 1A; IB1= 0.2A; IB2= -0.4A 0.25 μs isc Website：www.iscsemi.cn |
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