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WPB4002 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part No. WPB4002
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

WPB4002 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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WPB4002
No. A1769-1/5
Features
Reverse recovery time trr=115ns (typ)
ON-resistance RDS(on)=0.28Ω (typ)
Input capacitance Ciss=2200pF (typ)
10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
23
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
80
A
Source-to-Drain Diode Forward Current (DC)
ISD
23
A
Source-to-Drain Diode Forward Current (Pulse)
ISDP
PW≤10μs, duty cycle≤1%
80
A
Allowable Power Dissipation
PD
2.5
W
Tc=25°C
220
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
172
mJ
Avalanche Current *2
IAV
17
A
Note :
*1 VDD=99V, L=1mH, IAV=17A (Fig.1)
*2 L≤1mH, single pulse
Package Dimensions
unit : mm (typ)
7503-004
60910QB TK IM TC-00002373
SANYO Semiconductors
DATA SHEET
WPB4002
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Ordering number : ENA1769
Product & Package Information
• Package
: TO-3PB
• JEITA, JEDEC
: SC-65, TO-247, SOT199
• Minimum Packing Quantity : 100 pcs. / tray
Marking
14.0
15.6
4.8
2.0
3.2
1.6
1.0
0.6
5.45
5.45
12 3
0.6
2.0
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
PB4002
LOT No.


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