Document Number: 91191

www.vishay.com

S10-1257-Rev. C, 31-May-10

1

Power MOSFET

IRFL014, SiHFL014

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performace

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

60

0.20

11

3.1

5.8

Configuration

Single

N-Channel MOSFET

G

D

S

SOT-223

G

D

S

D

ORDERING INFORMATION

Package

SOT-223

SOT-223

Lead (Pb)-free and Halogen-free

SiHFL014-GE3

Lead (Pb)-free

IRFL014PbF

SiHFL014-E3

SnPb

IRFL014

SiHFL014

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

Continuous Drain Current

2.7

A

1.7

22

Linear Derating Factor

0.025

W/°C

0.017

100

mJ

Maximum Power Dissipation

3.1

W

2.0

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply