Document Number: 91340

www.vishay.com

S10-1682-Rev. A, 26-Jul-10

1

Power MOSFET

IRFZ20, SiHFZ20

Vishay Siliconix

FEATURES

• Compact Plastic Package

•Fast Switching

• Low Drive Current

• Ease of Paralleling

• Excellent Temperature Stability

• Parts Per Million Quality

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The technology has expanded its product base to serve the

low

voltage,

very

low

MOSFET

transistor

requirements.

Vishay’s highly efficient geometry and

unique processing have been combined to create the lowest

on resistance per device performance. In addition to this

feature all have documented reliability and parts per million

quality!

The transistor also offer all of the well established

advantages of MOSFETs such as voltage control, very fast

switching, ease of paralleling, and temperature stability of

the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers, high energy pulse circuits, and in systems that

are

operated

from

low

voltage

batteries,

such

as

automotive, portable equipment, etc.

Notes

b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).

PRODUCT SUMMARY

50

0.10

17

9.0

3.0

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRFZ20PbF

SiHFZ20-E3

SnPb

IRFZ20

SiHFZ20

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

50

V

± 20

Continuous Drain Current

15

A

10

60

5mJ

Linear Derating Factor (see fig. 16)

0.32

W/°C

Maximum Power Dissipation (see fig. 16)

40

W

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300 (0.063" (1.6 mm) from case

* Pb containing terminations are not RoHS compliant, exemptions may apply