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SIHFZ34-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFZ34-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91290 2 S11-0517-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFZ34, SiHFZ34 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.7 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.065 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 18 Ab - - 0.050 Ω Forward Transconductance gfs VDS = 25 V, ID = 18 A 9.3 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1200 - pF Output Capacitance Coss - 600 - Reverse Transfer Capacitance Crss - 100 - Total Gate Charge Qg VGS = 10 V ID = 30 A, VDS = 48 V, see fig. 6 and 13b -- 46 nC Gate-Source Charge Qgs -- 11 Gate-Drain Charge Qgd -- 22 Turn-On Delay Time td(on) VDD = 30 V, ID = 30 A, Rg = 12 Ω, RD = 1.0 Ω, see fig. 10b -13 - ns Rise Time tr - 100 - Turn-Off Delay Time td(off) -29 - Fall Time tf -52 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 30 A Pulsed Diode Forward Currenta ISM - - 120 Body Diode Voltage VSD TJ = 25 °C, IS = 30 A, VGS = 0 Vb -- 1.6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 30 A, dI/dt = 100 A/ μs - 120 230 ns Body Diode Reverse Recovery Charge Qrr -0.7 1.4 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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