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IRLZ24S Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRLZ24S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Document Number: 90416 www.vishay.com S11-1044-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive •RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature •Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRLZ24L, SiHLZ24L) is available for low-profile application. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 444 μH, Rg = 25 , IAS = 17 A (see fig. 12). c. ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material) PRODUCT SUMMARY VDS (V) 60 RDS(on) ()VGS = 5 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) G D S ORDERING INFORMATION Package D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHLZ24S-GE3 SiHLZ24L-GE3 Lead (Pb)-free - IRLZ24LPbF - SiHLZ24L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 V TC = 25 °C ID 17 A TC = 100 °C 12 Pulsed Drain Currenta IDM 68 Linear Derating Factor 0.40 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 110 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.7 Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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