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IRLZ34L Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRLZ34L Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 90418 www.vishay.com S11-1044-Rev. D, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ34S, SiHLZ34S) • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) • 175 °C Operating Temperature •Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRLZ34L, SiHLZ34L) is available for low-profile applications. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12). c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) ()VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) G D S ORDERING INFORMATION Package D2PAK (TO-263) I2PAK (TO-262) Lead (Pb) free and Halogen-free SiHLZ34S-GE3 - Lead (Pb) free - IRLZ34LPbF - SiHLZ34L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 V TC = 25 °C ID 30 A TC = 100 °C 21 Pulsed Drain Currenta IDM 110 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energyb EAS 128 mJ Maximum Power Dissipation TC = 25 °C PD 88 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.7 Peak Diode Recovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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