S2055AF datasheet(2/3 Pages) ISC

Part #	S2055AF

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

S2055AF

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=100mA ;IB=0

700

V

VCEsat

Collector-emitter saturation voltage

IC=4.5A ;IB=2.0A

1.0

V

VBEsat

Base-emitter saturation voltage

IC=4.5A ;IB=2.0A

1.3

V

ICES

Collector cut-off current

VCE=1500V; VBE=0

TC=125℃

1

2

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

300

mA

hFE

DC current gain

IC=1A ; VCE=5V

8

fT

Transition frequency

IC=0.1A ; VCE=5V;f=5MHz

7

MHz

Switching times inductive load

ts

Storage time

7

μs

tf

Fall time

IC=4.5A ; hFE=2.5; VCC=140V

LC=0.9mH; LB=3μH

0.55

μs

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