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TIP122 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP122 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Darlington Power Transistors TIP120/121/122 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT TIP120 60 TIP121 80 VCEO(SUS) Collector-emitter sustaining voltage TIP122 IC=0.1A, IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A ,IB=20mA 4.0 V VBE Base-emitter on voltage IC=3.0A ; VCE=3V 2.5 V TIP120 VCB=60V, IE=0 TIP121 VCB=80V, IE=0 ICBO Collector cut-off current TIP122 VCB=100V, IE=0 0.2 mA TIP120 VCE=30V, IB=0 TIP121 VCE=40V, IB=0 ICEO Collector cut-off current TIP122 VCE=50V, IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 2 mA hFE-1 DC current gain IC=0.5A ; VCE=3V 1000 hFE-2 DC current gain IC=3.0A ; VCE=3V 1000 Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF |
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