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TIP2955 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP2955 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors TIP2955 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA ;IB=0 -60 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -1.1 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A -3.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-4V -1.5 V ICEO Collector cut-off current VCE=-30V; IB=0 -0.7 mA ICER Collector cut-off current VCE=-70Vdc;RBE=100Ohm -1.0 mA ICEV Collector cut-off current VCE=-100Vdc,VBE(off)=-1.5Vdc -5.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -5.0 mA hFE-1 DC current gain IC=-4A ; VCE=-4V 20 70 hFE-2 DC current gain IC=-10A ; VCE=-4V 5.0 Is/b Second breakdown collector current With base forward biased VCE=-30Vdc,t=1.0s, Nonrepetitive 3.0 A fT Transition frequency IC=-0.5A ; VCE=-10V 2.5 MHz |
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