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SI3424CDV Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI3424CDV Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Document Number: 67443 S11-0863-Rev. A, 02-May-11 www.vishay.com 3 Vishay Siliconix Si3424CDV This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 V DS - Drain-to-Source Voltage (V) V GS = 10 V thru 4 V V GS = 3 V 0.010 0.016 0.022 0.028 0.034 0 5 10 15 20 I D -Drain Current (A) V GS = 4.5 V V GS = 10 V 0 2 4 6 8 10 02468 10 Q g - Total Gate Charge (nC) I D = 7.2 A V DS = 15 V V DS = 8 V V DS = 24 V Transfer Characteristics Curves vs. Temp. Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 00.5 11.5 22.5 V GS - Gate-to-Source Voltage (V) T C = 125 °C T C = 25 °C T C = - 55 °C 0 150 300 450 600 0 6 12 18 24 30 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 255075 100 125 150 T J - Junction Temperature (°C) V GS = 10 V, ID = 7.2 A V GS = 4.5 V, ID = 6.5 A |
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