SI3585CDV datasheet(10/16 Pages) VISHAY

Part #	SI3585CDV

Description	N- and P-Channel 20 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 67470

S11-0613-Rev. A, 04-Apr-11

Vishay Siliconix

Si3585CDV

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

0.5

1

1.5

2

2.5

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Power, Junction-to-Case

0

0.4

0.8

1.2

1.6

025

50

75

100

125

150

T

C - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.2

0.4

0.6

0.8

1.0

0

255075

100

125

150

T

A - Ambient Temperature (°C)

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SI3585CDV Datasheet(PDF) 10 Page - Vishay Siliconix

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