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SI3585CDV-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix |
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SI3585CDV-T1-GE3 Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 16 page Document Number: 67470 S11-0613-Rev. A, 04-Apr-11 www.vishay.com 9 Vishay Siliconix Si3585CDV This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.55 0.7 0.85 1 1.15 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.06 0.12 0.18 0.24 0.3 02468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 1.9 A 0.001 0 1 20 25 5 15 10 0.01 Time (s) 0.1 10 Safe Operating Area, Junction-to-Case 0.01 0.1 1 10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T C = 25 °C Single Pulse BVDSS Limited 10 ms 1 s, 10 s DC |
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