Electronic Components Datasheet Search |
|
SI3586DV Datasheet(PDF) 4 Page - Vishay Siliconix |
|
SI3586DV Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 Vishay Siliconix Si3586DV N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.1 1 10 0 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.05 0.10 0.15 0.20 0.25 0 1234 5 ID = 3.4 A VGS - Gate-to-Source Voltage (V) 0.01 0 1 6 8 2 4 10 30 0.1 Time (s) Safe Operating Area, Junction-to-Case 10 0.1 0.1 1 10 100 0.01 1 ms 1 R * Limited by DS(on) TC = 25 °C Single Pulse 10 ms 100 ms DC 1 s, 10 s VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified |
Similar Part No. - SI3586DV_09 |
|
Similar Description - SI3586DV_09 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |