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SI3588DV-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI3588DV-T1-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 12 page Document Number: 71332 S09-2275-Rev. B, 02-Nov-09 www.vishay.com 5 Vishay Siliconix Si3588DV N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 110 10-1 10-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Output Characteristics On-Resistance vs. Drain Current 0 2 4 6 8 0 1234 5 VDS - Drain-to-Source Voltage (V) VGS = 4.5 V thru 2.5 V 2 V 1.5 V 0.00 0.15 0.30 0.45 0.60 0.75 02468 ID - Drain Current (A) VGS = 1.8 V VGS = 4.5 V VGS = 2.5 V Transfer Characteristics Capacitance 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) TC = - 55 °C 125 °C 25 °C 0 100 200 300 400 500 600 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Coss Ciss Crss |
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