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Document Number: 73789

S09-2110-Rev. B, 12-Oct-09

Vishay Siliconix

Si3850ADV

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.01

0.1

0.0

0.3

0.6

0.9

1.2

1.5

1

10

25 °C

0.001

150 °C

- 0.4

- 0.3

- 0.2

- 0.1

- 0.0

0.1

0.2

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.0

0.3

0.6

0.9

1.2

1.5

012345

25 °C

125 °C

Time (s)

1

10

0.1

0.01

0.001

0

6

12

18

24

30

Safe Operating Area

Single Pulse

DC

0.01

0.1

1

10

0.1

1

10

100

1 s, 10 s

100 ms

10 ms

1 ms

Limited by R

*

DS(on)

BVDSS Limited