SI4178DY-T1-GE3 datasheet(3/10 Pages) VISHAY

Part #	SI4178DY-T1-GE3

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65718

S10-0212-Rev. A, 25-Jan-10

www.vishay.com

3

Vishay Siliconix

Si4178DY

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10Vthru 6V

VGS =3V

VGS =5V

VGS =4V

VDS - Drain-to-Source Voltage (V)

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0

5

10

15

20

25

30

35

40

VGS =4.5 V

VGS =10V

ID - Drain Current (A)

0

2

4

6

8

10

024

6

8

VDS =24V

ID =8.4 A

VDS =7.5 V

VDS =15V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

1

234

5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

0

100

200

300

400

500

600

0

5

10

15

20

25

30

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS =10V; ID =8.4 A

VGS =4.5 V; ID =8.4 A

TJ - Junction Temperature (°C)

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SI4178DY-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

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