Vishay Siliconix

Si4204DY

Document Number: 65154

S10-1042-Rev. A, 03-May-10

www.vishay.com

1

Dual N-Channel 20 V MOSFET

PRODUCT SUMMARY

20

14.5

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4204DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

N-Channel MOSFET

Notes:

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 120 °C/W.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

± 20

19.8

A

15.9

Pulsed Drain Current (10 µs Pulse Width)

50

Source-Drain Current Diode Current

2.7

Pulsed Source-Drain Current

50

Single Pulse Avalanche Current

L = 0.1 mH

20

Single Pulse Avalanche Energy

20

Maximum Power Dissipation

3.25

W

2.10

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

t

≤ 10 s

45

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady-State

29

38

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

•

100 % UIS Tested

APPLICATIONS

•

DC/DC Converter

•

Fixed Telecom