SI4470EY-T1-GE3 datasheet(3/8 Pages) VISHAY

Part #	SI4470EY-T1-GE3

Description	N-Channel 60 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 71606

S10-2137-Rev. D, 20-Sep-10

www.vishay.com

3

Vishay Siliconix

Si4470EY

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.005

0.010

0.015

0.020

0

10203040

50

ID - Drain Current (A)

VGS = 6 V

VGS = 10 V

0

2

4

6

8

10

0

10203040

50

VDS = 30 V

ID = 5 A

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

10

1

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

TJ = 25 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

3500

4000

0

15304560

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

- 50

- 25

0

25

50

75

100

125

150

175

VGS = 10 V

ID = 5 A

TJ - Junction Temperature (°C)

0.00

0.02

0.04

0.06

0.08

0.10

0

2468

10

ID = 5 A

VGS - Gate-to-Source Voltage (V)

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