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SI4470EY-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4470EY-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 71606 S10-2137-Rev. D, 20-Sep-10 www.vishay.com 3 Vishay Siliconix Si4470EY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.005 0.010 0.015 0.020 0 10203040 50 ID - Drain Current (A) VGS = 6 V VGS = 10 V 0 2 4 6 8 10 0 10203040 50 VDS = 30 V ID = 5 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100 10 1 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 500 1000 1500 2000 2500 3000 3500 4000 0 15304560 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 5 A TJ - Junction Temperature (°C) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 ID = 5 A VGS - Gate-to-Source Voltage (V) |
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