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SI4511DY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4511DY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 12 page Vishay Siliconix Si4511DY Document Number: 72223 S09-0867-Rev. E, 18-May-09 www.vishay.com 1 N- and P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Level Shift • Load Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 20 0.0145 at VGS = 10 V 9.6 0.017 at VGS = 4.5 V 8.6 P-Channel - 20 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4511DY -T1-E3 (Lead (Pb)-free) Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 G2 G1 S1 D2 D1 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t ≤ 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 16 ± 12 Continuous Drain Current (TJ = 150 °C) a, b TA = 25 °C ID 9.6 7.2 - 6.2 - 4.6 A TA = 70 °C 7.7 5.8 - 4.9 - 3.7 Pulsed Drain Current IDM 40 - 40 Continuous Source Current (Diode Conduction)a IS 1.7 0.9 - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C PD 2 1.1 2 1.1 W TA = 70 °C 1.3 0.7 1.3 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambienta t ≤ 10 s RthJA 50 62.5 50 62.5 °C/W Steady State 85 110 90 110 Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 30 35 |
Similar Part No. - SI4511DY_09 |
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Similar Description - SI4511DY_09 |
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