SI4564DY-T1-GE3 datasheet(2/12 Pages) VISHAY

Part #	SI4564DY-T1-GE3

Description	N- and P-Channel 40 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 65922

S10-0455-Rev. B, 22-Feb-10

Vishay Siliconix

Si4564DY

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

40

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 40

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

40

mV/°C

ID = - 250 µA

P-Ch

- 34

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 4.1

ID = - 250 µA

P-Ch

5.0

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.8

2.0

V

VDS = VGS, ID = - 250 µA

P-Ch

- 1.2

- 2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

N-Ch

± 100

nA

VDS = 0 V, VGS = ± 20 V

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

N-Ch

1

µA

VDS = - 40 V, VGS = 0 V

P-Ch

- 1

VDS = 40 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 40 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

20

A

VDS = - 5 V, VGS = - 10 V

P-Ch

- 20

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 8 A

N-Ch

0.0145 0.0175

Ω

VGS = - 10 V, ID = - 8 A

P-Ch

0.0175

0.021

VGS = 4.5 V, ID = 5 A

N-Ch

0.017

0.020

VGS = - 4.5 V, ID = - 5 A

P-Ch

0.0232

0.028

Forward Transconductanceb

gfs

VDS = 15 V, ID = 8 A

N-Ch

27

S

VDS = - 15 V, ID = - 8 A

P-Ch

25

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 20 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 20 V, VGS = 0 V, f = 1 MHz

N-Ch

855

pF

P-Ch

2000

Output Capacitance

Coss

N-Ch

120

P-Ch

240

Reverse Transfer Capacitance

Crss

N-Ch

48

P-Ch

202

Total Gate Charge

Qg

VDS = 20 V, VGS = 10 V, ID = 10 A

N-Ch

20.5

31

nC

VDS = - 20 V, VGS = - 10 V, ID = - 10 A

P-Ch

41.5

63

N-Channel

VDS = 20 V, VGS = 4.5 V, ID = 10 A

P-Channel

VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A

N-Ch

9.8

15

P-Ch

21.7

33

Gate-Source Charge

Qgs

N-Ch

2.6

P-Ch

5.6

Gate-Drain Charge

Qgd

N-Ch

2.6

P-Ch

9.8

Gate Resistance

Rg

f = 1 MHz

N-Ch

0.3

1.5

3.0

Ω

P-Ch

1.3

6.4

12.8

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