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Si4559ADY-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix

Part # Si4559ADY-T1-GE3
Description  N- and P-Channel 60-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

Si4559ADY-T1-GE3 Datasheet(HTML) 9 Page - Vishay Siliconix

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Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
9
Vishay Siliconix
Si4559ADY
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25 °C
20
10
1
VSD - Source-to-Drain Voltage (V)
TJ = 150 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0
2468
10
ID = 3.1 A
VGS - Gate-to-Source Voltage (V)
0
30
10
20
Time (s)
40
1
600
10
10-1
10-3
50
100
10-2
Safe Operating Area, Junction-to-Case
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
P(t) = 10
DC
ID(on)
Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
IDM Limited
Limited
by RDS(on)*
VDS - Drain-to-Source Voltage (V)
* VGS
minimum VGS at which RDS(on) is specified
>


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