SI4666DY datasheet(1/10 Pages) VISHAY

Part #	SI4666DY

Description	N-Channel 25 V (D-S) MOSFET

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Vishay Siliconix

Si4666DY

Document Number: 66587

S10-1044-Rev. A, 03-May-10

www.vishay.com

1

N-Channel 25 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Synchronous Buck Converter

•

DC/DC Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

25

0.010 at VGS = 10 V

16.5

10.7 nC

0.011 at VGS = 4.5 V

15.8

0.014 at VGS = 2.5 V

14

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

D

S

D

S

D

S

D

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

25

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

16.5

A

TC = 70 °C

9.3

TA = 25 °C

11.5b,c

TA = 70 °C

9.4b,c

Pulsed Drain Current

IDM

40

Continuous Source-Drain Diode Current

TC = 25 °C

IS

4.5

TA = 25 °C

2.3b,c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

15

Avalanche Energy

EAS

11.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

5

W

TC = 70 °C

3.2

TA = 25 °C

2.50b,c

TA = 70 °C

1.6b,c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

38

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

20

25

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