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SI4654DY-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4654DY-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 69813 S09-0138-Rev. C, 02-Feb-09 www.vishay.com 3 Vishay Siliconix Si4654DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS =10 V thru 4 V 0.0030 0.0034 0.0038 0.0042 0.0046 0.0050 014 28 42 56 70 ID - Drain Current (A) VGS =10 V VGS =4.5 V 0 2 4 6 8 10 0 13263952 65 ID =10A Qg - Total Gate Charge (nC) VDS =20 V VDS =10 V VDS =15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 0 1 234 5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C TC = 125 °C Crss 0 920 1840 2760 3680 4600 0 5 10 15 20 25 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) ID =15A VGS =10 V VGS =4.5 V |
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