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SI4914BDY-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4914BDY-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 15 page Vishay Siliconix Si4914BDY Document Number: 69654 S09-2109-Rev. E, 12-Oct-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Integrated Schottky • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook PC - System Power dc-to-dc PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) Channel-1 30 0.021 at VGS = 10 V 8.4 6.7 0.027 at VGS = 4.5 V 7.4 Channel-2 0.020 at VGS = 10 V 8d 7.0 0.025 at VGS = 4.5 V 8d SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 D1 G1 D1 S1/D2 G2 S1/D2 S2 S1/D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information:Si4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G2 S2 N-Channel 2 MOSFET Schottky Diode G1 N-Channel 1 MOSFET S1/D2 Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Package limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C) a, b TC = 25 °C ID 8.4 8d A TC = 70 °C 6.7 7.4 TA = 25 °C 6.7b, c 7.4b, c TA = 70 °C 5.3b, c 5.7b, c Pulsed Drain Current (10 µs Pulse Width) IDM 40 40 Continuous Source-Drain Diode Current TC = 25 °C IS 2.4 2.8 TA = 25 °C 1.0b, c 1.1b, c PulseD Source-Drain Current ISM 40 40 Single-Pulse Avalanche Current L = 0.1 mH IAS 15 Single-Pulse Avalanche Energy EAS 11.2 mJ Maximum Power Dissipationa, b TC = 25 °C PD 2.7 3.1 W TC = 70 °C 1.7 2.0 TA = 25 °C 1.7b, c 2.0b, c TA = 70 °C 1.1b, c 1.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C |
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